SLD-68HL1A SILONEX, SLD-68HL1A Datasheet

SLD-68HL1A

Manufacturer Part Number

SLD-68HL1A

Description

Photodiode, Planar; TO-46; 450 muA (Typ.); 0.40 V (Typ.); 100 nA (Max.); -40 de

Manufacturer

SILONEX

Datasheet

1.SLD-68HL1A.pdf (1 pages)

Specifications of SLD-68HL1A

Active Area

2 sq.mm

Angle, Response

15 °

Capacitance, Junction

40 pF

Chip Active Area

2.0 sq.mm

Current, Dark

100 nA

Current, Dark, Reverse

100 nA (Max.)

Current, Short Circuit

70 μA

Diameter, Lead

0.50 to 0.52 mm

Length, Lead

25.4 mm (Min.)

Package Type

TO-46

Primary Type

Photo

Sensitivity Spectral Range

400 to 1100 nm

Spectral Application Range

400 to 1100

Temperature Coefficient

+0.2 %⁄°C (Typ.)

Temperature, Operating

-40 to +125 °C

Temperature, Operating, Maximum

125 °C

Temperature, Operating, Minimum

-40 °C

Time, Fall

1.5 μs

Time, Rise

1 μs

Voltage, Breakdown

50 V

Voltage, Breakdown, Reverse

50 V (Min.)

Voltage, Open Circuit

0.4 V

Lead Free Status / Rohs Status

RoHS Compliant part

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Features

Description

This

photodetector is designed to operate in either

photovoltaic or reverse bias mode. It provides

excellent linearity in output signal versus irradiance.

This is an ideal detector for fast rise time applications.

Absolute Maximum Ratings

Storage Temperature

Operating Temperature

Soldering Temperature (1)

Notes: (1) >2 mm from case for <5 sec.

Electrical Characteristics

Specifications subject to change without notice

QF-84

Symbol

Low capacitance

Fast switching time

Low leakage current

Linear response vs irradiance

Hermetic TO-46 package with high dome lens

Multiple dark current ranges available

1/2

(2) Ee = source @ 2854 K

(3) Ee = source @

small

Reverse Dark Current

Maximum Sensitivity Wavelength

Reverse Breakdown Voltage

Sensitivity Spectral Range

area

Acceptance Half Angle

Junction Capacitance

Open Circuit Voltage

Short Circuit Current

Temp. Coef.

Parameter

Rise Time

Fall Time

planar,

= 880 nm

=25 C unless otherwise noted)

SLD-68HL1C

SLD-68HL1D

SLD-68HL1A

SLD-68HL1B

SLD-68HL1E

passivated

-40 C to +125 C

260 C

silicon

MIN

400

TYP

0.40

+0.2

930

1.0

1.5

90°

50°

70°

Chip Size = 1.7 mm X 1.7 mm

Active Area = 2.0 sq.mm.

60°

80°

100°

4.7

1.0

MAX

1100

100

250

40°

Directional Sensitivity Characteristics

0.8

30°

0.6

UNITS

%/ C (2)

5.1

deg

20°

0.4

25.4

Min.

10°

0.50-0.52

Ee=5mW/cm

(off center-line)

0°

=100 A

1.0

0.8

0.6

0.4

0.2

0.0

=0V, Ee=5mW/cm

=100mV, Ee=0

=5V, Ee=0

=0, Ee=0, f=1MHz

=10V, R

Dimensions in mm. (+/- 0.13)

TEST CONDITIONS

20°

SLD-68HL1

Planar Photodiode

Anode

Half Angle = 15°

(Common to case)

40°

2.5

ø 5.3

CATHODE

=1k

60°

(2)

80°

(3)

45°

100°

(2)

120°

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