EPM2210F324C5N Altera, EPM2210F324C5N Datasheet - Page 54

IC MAX II CPLD 2210 LE 324-FBGA

EPM2210F324C5N

Manufacturer Part Number
EPM2210F324C5N
Description
IC MAX II CPLD 2210 LE 324-FBGA
Manufacturer
Altera
Series
MAX® IIr
Datasheets

Specifications of EPM2210F324C5N

Programmable Type
In System Programmable
Delay Time Tpd(1) Max
7.0ns
Voltage Supply - Internal
2.5V, 3.3V
Number Of Logic Elements/blocks
2210
Number Of Macrocells
1700
Number Of I /o
272
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
324-FBGA
Voltage
2.5V, 3.3V
Memory Type
FLASH
Number Of Logic Elements/cells
2210
Family Name
MAX II
# Macrocells
1700
Frequency (max)
1.8797GHz
Propagation Delay Time
11.2ns
Number Of Logic Blocks/elements
221
# I/os (max)
272
Operating Supply Voltage (typ)
2.5/3.3V
In System Programmable
Yes
Operating Supply Voltage (min)
2.375V
Operating Supply Voltage (max)
3.6V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
324
Package Type
FBGA
For Use With
P0305 - KIT MAX II MICRO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Lead Free Status / Rohs Status
Compliant
Other names
544-1961
EPM2210F324C5N

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4–4
Figure 4–2. Transistor-Level Diagram of MAX II Device I/O Buffers
Figure 4–3. ESD Protection During Positive Voltage Zap
MAX II Device Handbook
n+
The CMOS output drivers in the I/O pins intrinsically provide electrostatic discharge
(ESD) protection. There are two cases to consider for ESD voltage strikes: positive
voltage zap and negative voltage zap.
A positive ESD voltage zap occurs when a positive voltage is present on an I/O pin
due to an ESD charge event. This can cause the N+ (Drain)/ P-Substrate junction of
the N-channel drain to break down and the N+ (Drain)/P-Substrate/N+ (Source)
intrinsic bipolar transistor turn on to discharge ESD current from I/O pin to GND.
The dashed line (see
positive ESD zap.
IOE Signal
p - well
I/O
n+
GND
VPAD
Figure
Source
Drain
Drain
Source
PMOS
NMOS
4–3) shows the ESD current discharge path during a
Larger of VCCIO or VPAD
p+
IOE Signal or the
Gate
Gate
Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices
n - well
Hot Socketing Feature Implementation in MAX II Devices
P-Substrate
VCCIO
p+
p - substrate
N+
N+
VCCIO or VPAD
The Larger of
D
S
n+
GND
I/O
G
© October 2008 Altera Corporation
Ensures 3.3-V
Tolerance and
Hot-Socket
Protection

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