MT46V128M8P-6T IT:A Micron Technology Inc, MT46V128M8P-6T IT:A Datasheet - Page 66

• Manufacturer Part Number: MT46V128M8P-6T IT:A
• Description: DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V128M8P-6T IT:A

• Package: 66TSOP
• Density: 1 Gb
• Address Bus Width: 16 Bit
• Operating Supply Voltage: 2.5 V
• Maximum Clock Rate: 333 MHz
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: -40 to 85 °C

Figure 37:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Consecutive WRITE-to-WRITE
Notes:
t DQSS (NOM)
Command
Address
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
DQS
CK#
DM
DQ
CK
WRITE
Bank,
Col b
T0
t DQSS
NOP
DI
T1
b
66
T1n
WRITE
Bank,
Col n
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2n
NOP
1Gb: x4, x8, x16 DDR SDRAM
T3
DI
n
T3n
Transitioning Data
©2003 Micron Technology, Inc. All rights reserved.
NOP
T4
T4n
Operations
NOP
T5
Don’t Care