MT46V128M8P-6T IT:A Micron Technology Inc, MT46V128M8P-6T IT:A Datasheet - Page 17

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MT46V128M8P-6T IT:A

Manufacturer Part Number
MT46V128M8P-6T IT:A
Description
DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V128M8P-6T IT:A

Package
66TSOP
Density
1 Gb
Address Bus Width
16 Bit
Operating Supply Voltage
2.5 V
Maximum Clock Rate
333 MHz
Maximum Random Access Time
0.7 ns
Operating Temperature
-40 to 85 °C
Figure 8:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Transmitter
Input Voltage Waveform
Notes:
1. V
2. V
3. Numbers in diagram reflect nominal values utilizing circuit below for all devices other than
-5B.
OH
OL
(MAX) with test load is 0.373V.
(MIN) with test load is 1.927V.
25Ω
V
V
V
VssQ
OL
DD
OH
1.560V
1.400V
1.300V
1.275V
1.250V
1.225V
1.200V
1.100V
0.940V
V
IN
V
Q (2.3V MIN)
System noise margin (power/ground,
crosstalk, signal integrity attenuation)
(MAX) (0.83V
(MIN) (1.670V
(
AC
TT
between
and
) - provides margin
25Ω
V
termination)
IL
(
AC
V
)
2
OL
1
for SSTL_2
for SSTL_2 termination)
(MAX)
Reference
point
17
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
1Gb: x4, x8, x16 DDR SDRAM
Receiver
©2003 Micron Technology, Inc. All rights reserved.
V
V
V
V
V
V
V
V
IH
IH
REF
REF
REF
REF
IL
IL
(
(
(
(
DC
AC
AC
DC
+ AC noise
+ DC error
- DC error
- AC noise
)
)
)
)

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