MT46V128M8P-6T IT:A Micron Technology Inc, MT46V128M8P-6T IT:A Datasheet - Page 54

• Manufacturer Part Number: MT46V128M8P-6T IT:A
• Description: DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V128M8P-6T IT:A

• Package: 66TSOP
• Density: 1 Gb
• Address Bus Width: 16 Bit
• Operating Supply Voltage: 2.5 V
• Maximum Clock Rate: 333 MHz
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: -40 to 85 °C

Figure 26:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Consecutive READ Bursts
Notes:
Command
Command
Command
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
the first).
ing DO b.
Bank,
READ
Col n
Bank,
READ
Bank,
READ
Col n
Col n
T0
T0
T0
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
t
AC,
CL = 3
t
DQSCK, and
54
Bank,
Bank,
Bank,
READ
Col b
Col b
Col b
READ
READ
T2
T2
T2
DO
n
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t
DQSQ.
T2n
T2n
DO
n
T3
NOP
NOP
NOP
T3
T3
DO
1Gb: x4, x8, x16 DDR SDRAM
n
T3n
T3n
T3n
Transitioning Data
T4
NOP
T4
T4
NOP
NOP
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DO
b
T4n
T4n
T4n
DO
b
Operations
T5
T5
T5
NOP
NOP
NOP
DO
Don’t Care
b
T5n
T5n
T5n