MT47H32M16HR-25E IT:F TR Micron Technology Inc, MT47H32M16HR-25E IT:F TR Datasheet - Page 11
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MT47H32M16HR-25E IT:F TR
Manufacturer Part Number
MT47H32M16HR-25E IT:F TR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-25E_ITF_TR.pdf
(131 pages)
Specifications of MT47H32M16HR-25E IT:F TR
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
295mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Functional Block Diagrams
Figure 3: 128 Meg x 4 Functional Block Diagram
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
BA0, BA1
A0–A13,
RAS#
CAS#
ODT
WE#
CKE
CK#
CS#
CK
16
Address
register
registers
Control
Mode
logic
16
counter
Refresh
14
11
2
The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is inter-
nally configured as a multibank DRAM.
14
address
2
Row-
MUX
Column-
counter/
control
address
Bank
logic
latch
14
latch and
decoder
address
Bank0
row-
Bank1
Bank2
Bank3
9
2
16,384
DM mask logic
(16,384 x 512 x 16)
Sense amplifiers
I/O gating
decoder
Column
8,192
Memory
Bank1
Bank0
array
(x16)
Bank2
512
Bank3
COL0, COL1
internal
CK, CK#
16
11
16
16
Read
latch
CK out
drivers
Write
FIFO
CK in
and
4
4
4
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
COL0, COL1
Mask
Data
MUX
16
4
generator
512Mb: x4, x8, x16 DDR2 SDRAM
DQS
1
1
1
1
4
4
4
4
registers
Input
Data
4
1
1
1
1
4
4
4
4
DQS, DQS#
2
Functional Block Diagrams
1
4
CK, CK#
DRVRS
2
DLL
RCVRS
© 2004 Micron Technology, Inc. All rights reserved.
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
R2
R2
R2
R2
R2
R2
VssQ
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
VddQ
DM
DQ0–DQ3
DQS, DQS#
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