DAC1405D750HW/C1,5 NXP Semiconductors, DAC1405D750HW/C1,5 Datasheet - Page 12

IC DAC 14BIT SRL/SPI 100HTQFP

DAC1405D750HW/C1,5

Manufacturer Part Number
DAC1405D750HW/C1,5
Description
IC DAC 14BIT SRL/SPI 100HTQFP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of DAC1405D750HW/C1,5

Settling Time
20ns
Number Of Bits
14
Data Interface
Serial, SPI™
Number Of Converters
2
Voltage Supply Source
Analog and Digital
Power Dissipation (max)
1.11W
Operating Temperature
-45°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
100-TQFP Exposed Pad, 100-eTQFP, 100-HTQFP, 100-VQFP
Conversion Rate
750 MSPs
Resolution
14 bit
Interface Type
SPI
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Maximum Power Dissipation
1.11 W
Minimum Operating Temperature
- 40 C
Supply Current
44 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5089

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DAC1405D750HW/C1,5
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
NXP Semiconductors
Table 5.
V
T
otherwise specified.
[1]
[2]
[3]
[4]
DAC1405D750
Product data sheet
Symbol
IMD3
ACPR
NSD
amb
DDA(1V8)
D = guaranteed by design; C = guaranteed by characterization; I = 100 % industrially tested.
CLKP and CLKN inputs are at differential LVDS levels. An external differential resistor with a value of between 80  and 120  should
be connected across the pins (see
V
and the inductance between the receiver and the driver circuit ground voltages.
IMD3 rejection with 6 dBFS/tone.
=
gpd
40
 represents the ground potential difference voltage. This is the voltage that results from current flowing through the finite resistance
= V
Characteristics
C to +85
DDD(1V8)
Parameter
third-order intermodulation
distortion
adjacent channel power
ratio
noise spectral density
= 1.8 V; V
C; typical values measured at T
…continued
DDA(3V3)
Figure
= V
8).
All information provided in this document is subject to legal disclaimers.
DD(IO)(3V3)
Conditions
f
f
1-carrier; B = 5 MHz
2-carrier; B = 10 MHz
4-carrier; B = 20 MHz
f
1-carrier; B = 5 MHz
2-carrier; B = 10 MHz
4-carrier; B = 20 MHz
f
data
data
data
data
f
f
f
f
f
f
f
f
0 dBFS;
f
10 dBFS
o1
o2
o1
o2
o1
o2
o
o
o
= 184.32 MHz; f
= 184.32 MHz; f
= 184.32 MHz; f
= 184.32 MHz; f
= 19 MHz; 0 dBFS C
= 153.6 MHz;
= 153.6 MHz;
Rev. 3 — 7 September 2010
= 95 MHz;
= 97 MHz
= 137 MHz;
= 143 MHz
= 152.5 MHz;
= 153.5 MHz
= 3.3 V; AGND, DGND and GNDIO shorted together;
amb
Dual 14-bit DAC, up to 750 Msps; 4 and 8 interpolating
= 25
C; R
s
s
s
s
= 737.28 Msps
= 737.28 Msps; f
= 737.28 Msps; f
= 737.28 Msps
L
Test
C
C
I
I
C
C
C
C
C
C
C
= 50
[1]
differential; I
[4]
[4]
[4]
Min
-
-
-
-
-
-
-
-
-
-
-
-
o
o
= 96 MHz
= 153.6 MHz
O(fs)
Typ
77
74
74
75
72
68.5
73
71
67
161
156
158
DAC1405D750
= 20 mA; PLL off unless
Max
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Unit
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBFS/Hz
dBFS/Hz
dBFS/Hz
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