PEF80902HV1.1XT Infineon Technologies, PEF80902HV1.1XT Datasheet - Page 64

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PEF80902HV1.1XT

Manufacturer Part Number
PEF80902HV1.1XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of PEF80902HV1.1XT

Lead Free Status / Rohs Status
Compliant
4
4.1
Parameter
Ambient temperature under bias
Storage temperature
Maximum Voltage on V
Maximum Voltage on any pin with respect to
ground
ESD integrity (according EIA/JESD22-A114B (HBM)): 2 kV
Note: Stress above those listed here may cause permanent damage to the device.
Line Overload Protection
The T-SMINT
(CDM), EIA/JESD22-A114B (HBM) and to Latch-up tests according to JEDEC EIA /
JESD78. From these tests the following max. input currents are derived
Table 23
Test
ESD
Latch-up
DC
Data Sheet
Exposure to absolute maximum ratings conditions for extended periods may affect
device reliability.
Electrical Characteristics
Absolute Maximum Ratings
â
Maximum Input Currents
O is compliant to ESD tests according to ANSI / EOS / ESD-S 5.1-1993
DD
Pulse Width
100 ns
5 ms
--
Current
1.3 A
+/-200 mA
10 mA
56
Symbol Limit Values
T
T
V
V
A
STG
DD
S
-40 to 85
– 65 to 150
4.2
-0.3 to V
(max. < 5.5)
2 repetitions, respectively
Remarks
3 repetitions
Electrical Characteristics
DD
+ 3.3
(Table
PEF 80902
2001-11-12
23):
Unit
°C
°C
V
V

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