5962-8960101B2A QP SEMICONDUCTOR, 5962-8960101B2A Datasheet - Page 24

• Manufacturer Part Number: 5962-8960101B2A
• Manufacturer: QP SEMICONDUCTOR

Specifications of 5962-8960101B2A

• Logic Family: ACT
• Technology: CMOS
• Number Of Bits: 8
• Number Of Elements: 1
• Clock-edge Trigger Type: Positive-Edge
• Polarity: Non-Inverting
• Operating Supply Voltage (typ): 5V
• Propagation Delay Time: 13.5ns
• Output Type: 3-State
• Low Level Output Current: 24mA
• High Level Output Current: -24mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 20
• Lead Free Status / Rohs Status: Not Compliant

DSCC FORM 2234
APR 97
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with
MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit
shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method
1005 of MIL-STD-883.
(see 3.5 herein).
method 1019, condition A and as specified herein. Prior to and during total dose irradiation characterization and testing, the
devices for characterization shall be biased so that 50 percent are at inputs high and 50 percent are at inputs low, and the
devices for testing shall be biased to the worst case condition established during characterization. Devices shall be biased as
follows:
RHA level greater that 5K rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein
and shall be the preirradiation end-point electrical parameter limit at +25°C ±5°C. Testing shall be performed at initial
qualification and after any design or process changes which may affect the RHA response of the device.
Currents given are conventional current and positive when flowing into the referenced terminal.
4.4.3.2 Additional criteria for device classes B, S, Q, and V. The steady-state life test duration, test condition and test
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.5.1.1 Accelerated aging test. Accelerated aging shall be performed on classes M, B, S, Q, and V devices requiring an
4.5 Methods of inspection. Methods of inspection shall be specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
4.4.5 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
4.4.5.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883,
a.
b.
c.
d.
a. Device type 01:
b. Device type 02:
DEFENSE SUPPLY CENTER COLUMBUS
End-point electrical parameters shall be as specified in table II herein.
For device classes B, S, Q, and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for RHA level being tested. For device class M, the devices shall be subjected to radiation
hardness assured tests as specified in MIL-PRF-38535, appendix A for RHA level being tested. All device classes
must meet the postirradiation end-point electrical parameter limits as defined in table I at T
exposure, to the subgroups specified in table II herein.
RHA tests for device classes M, B, S, Q, and V for levels M, D, P, L, R, and F, shall be performed through each level to
determine at what levels the devices meet the RHA requirements. These RHA tests shall be performed for initial
qualification and after design or process changes which may affect the RHA performance of the device.
Prior to irradiation, each selected sample shall be assembled in its qualified package. It shall pass the specified
group A electrical parameters in table I for subgroups specified in table II herein.
(1) Inputs tested high, V
(2) Inputs tested low, V
(1) Inputs tested high, V
(2) Inputs tested low, V
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43216-5000
outputs are open.
open.
STANDARD
CC
CC
CC
CC
= 5.5 V dc +5 %, R
= 5.5 V dc ±5%, V
= 5.5 V dc +5%, R
= 5.5 V dc ±5%, V
IN
CC
IN
CC
= 0.0 V dc, R
= 5.0 V dc +10%, R
= 10Ω ±20%, V
= 10Ω ±20%, V
SIZE
IN
A
= 1 kΩ ±20%, and all outputs are open.
IN
IN
= 0.0 V dc, R
= 5.0 V dc +5%, R
IN
= 1 kΩ ±20%, and all outputs are open.
REVISION LEVEL
IN
= 1 kΩ ±20% and all outputs are
E
IN
= 1 kΩ ±20% and all
A
= +25°C ±5°, after
SHEET
5962-89601
24