APT33GF120LRD MICROSEMI, APT33GF120LRD Datasheet - Page 7

• Manufacturer Part Number: APT33GF120LRD
• Manufacturer: MICROSEMI

Specifications of APT33GF120LRD

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Not Compliant

Figure 19, Forward Voltage Drop vs Forward Current
Figure 21, Reverse Recovery Current vs Current Slew Rate
Figure 23, Reverse Recovery Time vs Current Slew Rate
0.005
0.001
0.05
0.01
100
250
200
150
100
1.0
0.5
0.1
80
60
40
20
50
40
30
20
10
50
0
0
0
di
di
10
V
0
0
0
F
F
F
-5
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
/dt, CURRENT SLEW RATE (AMPERES/µSEC)
/dt, CURRENT SLEW RATE (AMPERES/µSEC)
T
V
J
R
T
= 100°C
J
= 650V
T
= 100°C
200
200
J
= 150°C
D=0.5
1
Figure 25, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.05
0.02
0.01
0.2
0.1
400
400
60A
10
-4
2
30A
30A
600
600
SINGLE PULSE
T
J
T
= -55°C
J
15A
= 25°C
60A
3
15A
800
800
T
V
J
R
= 100°C
= 650V
RECTANGULAR PULSE DURATION (SECONDS)
10
-3
1000
1000
4
V
R
, REVERSE VOLTAGE (VOLTS)
10
-2
Figure 20, Reverse Recovery Charge vs Current Slew Rate
Figure 22, Dynamic Parameters vs Junction Temperature
Figure 24, Forward Recovery Voltage/Time vs Current Slew Rate
2400
2000
1600
1200
2000
1600
1200
800
400
800
400
2.0
1.6
1.2
0.8
0.4
0.0
0
0
di
di
-50
10
F
0
F
/dt, CURRENT SLEW RATE (AMPERES/µSEC)
/dt, CURRENT SLEW RATE (AMPERES/µSEC)
10
T
V
-25
-1
J
R
T
T
V
= 100°C
J
= 650V
I
R
J
F
= 100°C
200
t
, JUNCTION TEMPERATURE (°C)
= 650V
= 30A
rr
0
50
NOTE:
PEAK T P
25
I
400
RRM
DUTY FACTOR D = t
100
50
1.0
J
t
=
V
fr
600
fr
75
t
DM
1
APT33GF120B2RD/LRD
30A
t
2
x Z
Q
100 125
rr
60A
15A
800
t
Q
rr
JC
1 2
500
rr
/
t
+
T
C
1000
1000
150
10
100
80
60
40
20
0