APT33GF120LRD MICROSEMI, APT33GF120LRD Datasheet - Page 3

• Manufacturer Part Number: APT33GF120LRD
• Manufacturer: MICROSEMI

Specifications of APT33GF120LRD

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Not Compliant

Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
0.005
0.001
3,000
1,000
0.05
0.01
Figure 3, Typical Output Characteristics @ V
100
0.5
0.1
Figure 1, Typical Output Characteristics (T
V
V
V
60
40
20
80
60
40
20
10
0
CE
0
CE
CE
10
.01
0
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
250µSec. Pulse Test
SINGLE PULSE
D=0.5
T
V
0.02
0.01
0.05
0.2
0.1
T
GE
C
T
C
4
=+150°C
C
=+25°C
f = 1MHz
= 15V
=-55°C
0.1
2
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
V
GE
8
=17, 15 & 13V
10
-4
4
1.0
12
6
16
10
10V
12V
11V
9V
7V
8V
C
RECTANGULAR PULSE DURATION (SECONDS)
C
C
oes
ies
res
10
J
GE
= 25°C)
-3
20
50
8
= 15V
10
-2
100
Figure 2, Typical Output Characteristics (T
Figure 4, Maximum Forward Safe Operating Area
V
V
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
60
40
20
10
20
16
12
CE
CE
0
1
8
4
0
0
1
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
OPERATION
V CE (SAT)
T
LIMITED
10
I
J
C
BY
= +25°C
T
T
SINGLE PULSE
= I
-1
C
J
Q
=+150°C
C2
=+25°C
50
g
4
, TOTAL GATE CHARGE (nC)
V
10
CE
Note:
100
Peak T J = P DM x Z JC + T C
=240V
V
8
Duty Factor D =
GE
=17, 15 & 13V
1.0
t 1
150
12
APT33GF120B2RD/LRD
100
t 2
V
V
t 1
CE
CE
200
16
/ t 2
10V
12V
=600V
=960V
11V
9V
7V
8V
J
= 150°C)
1200
250
20
10
100µS
1mS
10mS