CY7C1412KV18-300BZXI Cypress Semiconductor Corp, CY7C1412KV18-300BZXI Datasheet - Page 31

• Manufacturer Part Number: CY7C1412KV18-300BZXI
• Description: CY7C1412KV18-300BZXI
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1412KV18-300BZXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (2M x 18)
• Speed: 300MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document History Page
Document Number: 001-57825 Rev. *D
Document Title: CY7C1410KV18/CY7C1425KV18/CY7C1412KV18/CY7C1414KV18, 36-Mbit QDR
Architecture
Document Number: 001-57825
Rev.
*A
*B
*C
*D
**
ECN No.
2816620 VKN/AESA
2884865
3018546
3155124
3165654
Orig. of
Change
VIDB
VKN
NJY
NJY
Submission
11/27/2009 New Data Sheet
02/26/2010 Changed t
10/21/2010 Converted from Preliminary to Final.
01/27/2011 Added Note 32.
02/08/2011 Updated Note 32.
Date
Description of Change
from 0.5ns to 0.35ns for 250MHz, and from 0.4ns to 0.3ns for 333MHz and 300MHz
Updated links in Worldwide Sales and Design Support.
Added
Minor edits and updated in new template.
Updated
Added
Ordering Code
Acronyms
Ordering
SA
/t
SC
from 0.7ns to 0.5ns for 167MHz, from 0.6ns to 0.4ns for 200MHz,
and
Information.
Units of
Definitions.
CY7C1410KV18, CY7C1425KV18
CY7C1412KV18, CY7C1414KV18
Measure.
®
II SRAM 2-Word Burst
Page 31 of 32
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