STY112N65M5 STMicroelectronics, STY112N65M5 Datasheet - Page 8

• Manufacturer Part Number: STY112N65M5
• Description: MOSFET N-CH 650V 93A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY112N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: -
• Power - Max: 450W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 710 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 96 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 350 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11236-5

Test circuits
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Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 15321 Rev 2
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 15. Gate charge test circuit
Figure 17. Unclamped inductive load test
Figure 19. Switching time waveform
V
P
i
V
W
i
=20V=V
P
w
2200
µF
1kΩ
GMAX
circuit
I
V
D
D
I
G
2.7kΩ
12V
=CONST
47kΩ
L
D.U.T.
47kΩ
100Ω
2200
µF
100nF
STY112N65M5
3.3
µF
D.U.T.
AM01469v1
AM01471v1
1kΩ
V
V
V
G
DD
DD