STY112N65M5 STMicroelectronics, STY112N65M5 Datasheet - Page 7

• Manufacturer Part Number: STY112N65M5
• Description: MOSFET N-CH 650V 93A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY112N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: -
• Power - Max: 450W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 710 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 96 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 350 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11236-5

STY112N65M5
1. Eon including reverse recovery of a SiC diode
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Output capacitance stored energy
V
GS(th)
1.00
0.80
0.70
(norm)
1.10
V
0.90
E
(V)
(µJ)
12
10
GS
oss
50
70
60
30
20
10
40
6
4
2
8
0
-50
0
0
0
V
Gate charge vs gate-source voltage Figure 9.
vs temperature
DS
-25
100
100
0
200 300
200
25
V
DD
I
D
=48A
=520V
50
400
300
75
500 600
100
400
V
T
GS
J
Q
(°C)
Doc ID 15321 Rev 2
g
(nC)
AM08897v1
AM08901v1
AM08899v1
V
400
500
100
0
DS
300
200
(V)
Figure 11. Normalized on resistance vs
Figure 13. Switching losses vs gate resistance
R
DS(on)
(norm)
E
6000
4000
3000
2000
1000
2.1
1.7
1.3
0.9
5000
0.5
(µJ)
-50
0
0
Capacitance variations
temperature
(1)
-25
V
T
I
D
DD
J
=64A
=25°C
=400V
10
0
25
20
Electrical characteristics
50
30
75
100
Eoff
40
T
Eon
J
(°C)
AM08900v1
AM08902v1
R
G
(Ω)
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