STY112N65M5 STMicroelectronics, STY112N65M5 Datasheet
STY112N65M5
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STY112N65M5 Summary of contents
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... Table 1. Device summary Order code STY112N65M5 May 2011 max I DS(on) D < 0.022 Ω Figure 1. Marking 112N65M5 Doc ID 15321 Rev 2 STY112N65M5 Max247 Internal schematic diagram Package Packaging Max247 Tube Max247 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 15321 Rev 2 STY112N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
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... STY112N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Max current during repetitive or single pulse avalanche I AR (pulse width limited by T Single pulse avalanche energy ...
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... Test conditions V = 100 MHz 520 520 MHz open drain V = 520 (see Figure 15) Doc ID 15321 Rev 2 STY112N65M5 Min. Typ 650 =125 ° 250 µ 0.019 Min. Typ. 16870 365 7 1333 350 1. 350 97 118 while V is rising from 0 oss DS while V is rising from 0 ...
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... STY112N65M5 Table 6. Switching times Symbol t Voltage delay time d(v) t Voltage rise time r(v) t Current fall time f(i) t Crossing time c(off) Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...
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... Single pulse - Figure 5. vs temperature Figure 7. AM08895v1 R DS(on) (Ω) 0.022 0.020 0.018 0.016 0.014 75 T (°C) 100 125 J Doc ID 15321 Rev 2 STY112N65M5 Thermal impedance 0.05 0.02 0.01 Zth=k Rthj-c δ=tp/τ tp τ Transfer characteristics Static drain-source on resistance V =10V AM09125v1 ( ...
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... STY112N65M5 Figure 8. Gate charge vs gate-source voltage Figure ( =520V =48A 200 0 100 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 12. Output capacitance stored energy E oss (µ 200 300 0 100 1. Eon including reverse recovery of a SiC diode ...
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... AM01468v1 Figure 17. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 19. Switching time waveform V (BR)DSS V DD AM01472v1 Doc ID 15321 Rev 2 STY112N65M5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µF ...
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... STY112N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® trademark. Doc ID 15321 Rev 2 Package mechanical data ...
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... Package mechanical data Table 8. Max247 mechanical data Dim Figure 20. Max247 drawing 0094330_Rev_D 10/12 mm Min. Typ. 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 Doc ID 15321 Rev 2 STY112N65M5 Max. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 ...
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... STY112N65M5 5 Revision history Table 9. Document revision history Date 20-Jan-2009 20-May-2011 Revision 1 First release. 2 Document status pomoted from preliminary data to datasheet. Doc ID 15321 Rev 2 Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15321 Rev 2 STY112N65M5 ...