STL100N1VH5 STMicroelectronics, STL100N1VH5 Datasheet - Page 7

• Manufacturer Part Number: STL100N1VH5
• Description: MOSFET N-CH 12V 100A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL100N1VH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 12.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 500mV @ 250µA
• Gate Charge (qg) @ Vgs: 26.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2085pF @ 10V
• Power - Max: 60W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11219-2

STL100N1VH5
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
(norm)
V
(V)
(V)
V
0.7
0.6
0.6
0.4
0.2
0.5
GS
1.2
1.0
0.8
0.8
0.4
1.0
0.9
SD
3
2
1
5
4
0
-50
0
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
-25
10
5
0
10
25 50
20
T
J
=-50°C
V
I
D
DD
=12.5A
15
=6V
30
75
100
20
40
T
J
125 150
=150°C
T
J
25
50
=25°C
I
Doc ID 018550 Rev 1
SD
Q
AM08180v1
AM08184v1
AM08182v1
(A)
T
g
J
(nC)
(°C)
Figure 11. Normalized on resistance vs
R
C
3500
3000
2500
2000
1500
1000
DS(on)
(norm)
(pF)
500
1.0
0.2
1.6
1.4
0.6
0
0
-50
0
Capacitance variations
temperature
-25
2
0
4
25
V
f=1MHz,
V
Electrical characteristics
DS
GS
=10V,
6
50
=0
75
8
100
10
T
J
(°C)
AM08181v1
AM08183v1
V
DS
Ciss
Crss
Coss
(V)
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