STL100N1VH5 STMicroelectronics, STL100N1VH5 Datasheet

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STL100N1VH5

Manufacturer Part Number
STL100N1VH5
Description
MOSFET N-CH 12V 100A POWERFLAT56
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STL100N1VH5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 mOhm @ 12.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
500mV @ 250µA
Gate Charge (qg) @ Vgs
26.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
2085pF @ 10V
Power - Max
60W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11219-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL100N1VH5
Manufacturer:
ST
0
Part Number:
STL100N1VH5
Manufacturer:
ST
Quantity:
20 000
Features
1. The value is rated according R
Application
Switching applications
Description
This device is a 12 V N-channel STripFET™V
Power MOSFET which has been designed to
achieve very low on-state resistance providing
also one of the best-in-class figure of merit
(FOM).
Table 1.
March 2011
STL100N1VH5
R
Extremely low on-resistance R
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Order code
DS(on)
STL100N1VH5
Order code
* Q
Device summary
g
industry benchmark
V
12 V
DSS
N-channel 12 V, 0.0022 Ω , 25 A PowerFLAT™ (5x6)
thj-pcb
<0.003 Ω
R
max.
DS(on)
DS(on)
100N1VH5
Marking
25 A
Doc ID 018550 Rev 1
I
D
(1)
Figure 1.
PowerFLAT™ (5x6)
STripFET™ V Power MOSFET
Package
Pin-out configuration
PowerFLAT™ ( 5x6 )
STL100N1VH5
Tape and reel
Packaging
www.st.com
1/13
13

Related parts for STL100N1VH5

STL100N1VH5 Summary of contents

Page 1

... Table 1. Device summary Order code STL100N1VH5 March 2011 STripFET™ V Power MOSFET R DS(on max. <0.003 Ω ( DS(on) Figure 1. Marking 100N1VH5 PowerFLAT™ (5x6) Doc ID 018550 Rev 1 STL100N1VH5 PowerFLAT™ ( 5x6 ) Pin-out configuration Package Packaging Tape and reel 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 018550 Rev 1 STL100N1VH5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STL100N1VH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (continuous (2) I Drain current (continuous (3) I Drain current (pulsed) DM (1) P Total dissipation at T TOT (2) P Total dissipation at T TOT ...

Page 4

... ± 4 2 Parameter Test conditions V =10 V, f=1 MHz =4 Figure 14 Doc ID 018550 Rev 1 STL100N1VH5 Min. Typ 250 µA 0 12.5 A 0.0022 D = 12.5 A 0.0032 D Min. Typ. Max. 2085 - 949 240 = 12.5 A 26.5 - 5.2 4.8 Max. Unit V 1 µA 10 µA 100 nA ± ...

Page 5

... STL100N1VH5 Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Figure 3. AM08174v1 Tj=150°C Tc=25°C Single pulse 10ms 100ms (V) DS Figure 5. AM08176v1 (A) 3V 2.5V 2V 1.5V 2 2 temperature Figure 7. AM08178v1 R DS(on) (Ohm (°C) 100 J Doc ID 018550 Rev 1 STL100N1VH5 Thermal impedance Transfer characteristics =2. Static drain-source on resistance V =4. AM08177v1 V (V) GS AM08179v1 I ...

Page 7

... STL100N1VH5 Figure 8. Gate charge vs gate-source voltage Figure ( =12. Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.0 0.9 0.8 0.7 0.6 0.5 0 AM08180v1 C (pF) 3500 3000 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 018550 Rev 1 STL100N1VH5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

Page 9

... STL100N1VH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 018550 Rev 1 Package mechanical data 9/13 ...

Page 10

... PowerFLAT 5x6 mechanical data Dim Figure 19. PowerFLAT 5x6 drawing Bottom View 10/13 Min. 0.80 0.02 0.30 4.11 3.50 0.715 1. Doc ID 018550 Rev 1 STL100N1VH5 mm Typ. Max. 1.00 0.05 0.25 0.50 5.20 6.15 4.31 3.70 1.27 0.65 1.015 1.35 Top View D Side View 8231817_Rev.C ...

Page 11

... STL100N1VH5 Figure 20. Recommended footprint 5.35 4.41 1.27 0.60 Doc ID 018550 Rev 1 Package mechanical data Footprint 11/13 ...

Page 12

... Revision history 5 Revision history Table 10. Document revision history Date 10-Mar-2011 12/13 Revision 1 First release. Doc ID 018550 Rev 1 STL100N1VH5 Changes ...

Page 13

... STL100N1VH5 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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