STL100N1VH5 STMicroelectronics, STL100N1VH5 Datasheet - Page 5

• Manufacturer Part Number: STL100N1VH5
• Description: MOSFET N-CH 12V 100A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL100N1VH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 12.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 500mV @ 250µA
• Gate Charge (qg) @ Vgs: 26.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2085pF @ 10V
• Power - Max: 60W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11219-2

STL100N1VH5
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 018550 Rev 1
V
R
Figure 13
I
I
di/dt = 100 A/µs,
V
DD
SD
SD
G
DD
=4.7 Ω, V
Test conditions
=6 V, I
= 25 A, V
= 25 A,
Test conditions
=10 V, Tj=150 °C
D
= 12.5 A,
GS
GS
=4.5 V
=0
Electrical characteristics
Min.
Min
-
-
-
-
-
Typ.
Typ.
14.4
31.6
2.2
49
54
50
16
Max
Max.
100
1.1
25
-
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
5/13