MT47H32M8BP-5E IT:B TR Micron Technology Inc, MT47H32M8BP-5E IT:B TR Datasheet - Page 121

• Manufacturer Part Number: MT47H32M8BP-5E IT:B TR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M8BP-5E IT:B TR

• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 600ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 125mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 78: RESET Function
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Bank address
Command
Address
ODT
DQS 3
DM 3
CK#
CKE
A10
DQ 3
R
CK
TT
Bank a
READ
Col n
T0
High-Z
High-Z
Notes:
NOP 2
T1
1. V
2. Either NOP or DESELECT command may be applied.
3. DM represents DM for x4/x8 configuration and UDM, LDM for x16 configuration. DQS
4. In certain cases where a READ cycle is interrupted, CKE going HIGH may result in the
5. Initialization timing is shown in Figure 41 (page 82).
represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, and RDQS# for the appropri-
ate configuration (x4, x8, x16).
completion of the burst.
DD
Bank b
Col n
READ
, V
T2
DDL
, V
DDQ
NOP 2
Indicates a break in
time scale
T3
, V
DO
TT
, and V
DO
NOP 2
T4
121
System
DO
RESET
REF
must be valid at all times.
t DELAY
Unknown
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
1
R
TT
On
High-Z
High-Z
Transitioning Data
t CL
t CK
©2003 Micron Technology, Inc. All rights reserved.
Start of normal 5
initialization
t CL
sequence
NOP 2
Ta0
4
T = 400ns (MIN)
t CKE (MIN)
All banks
Tb0
PRE
Don’t Care
High-Z
t RPA
Reset