MT47H32M8BP-5E IT:B TR Micron Technology Inc, MT47H32M8BP-5E IT:B TR Datasheet - Page 8
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MT47H32M8BP-5E IT:B TR
Manufacturer Part Number
MT47H32M8BP-5E IT:B TR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M8BP-5E_ITB_TR.pdf
(128 pages)
Specifications of MT47H32M8BP-5E IT:B TR
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
125mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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State Diagram
Figure 2: Simplified State Diagram
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Setting
default
EMRS
MRS
OCD
Note:
WRITE
precharge
WRITE A
Writing
Writing
(E)MRS
with
auto
1. This diagram provides the basic command flow. It is not comprehensive and does not
identify all timing requirements or possible command restrictions such as multibank in-
teraction, power down, entry/exit, etc.
power-
Active
down
Automatic Sequence
Command Sequence
WRITE
PRE
Initialization
precharged
Precharging
sequence
PRE, PRE_A
Activating
all banks
active
Bank
Idle
ACT
8
READ
ACT = ACTIVATE
CKE_H = CKE HIGH, exit power-down or self refresh
CKE_L = CKE LOW, enter power-down
(E)MRS = (Extended) mode register set
PRE = PRECHARGE
PRE_A = PRECHARGE ALL
READ = READ
READ A = READ with auto precharge
REFRESH = REFRESH
SR = SELF REFRESH
WRITE = WRITE
WRITE A = WRITE with auto precharge
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Precharge
power-
down
256Mb: x4, x8, x16 DDR2 SDRAM
precharge
Reading
READ A
Reading
with
auto
REFRESH
refreshing
CKE_L
Self
READ
CKE_L
Refreshing
©2003 Micron Technology, Inc. All rights reserved.
State Diagram
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