MT47H64M16HR-3 L:E TR Micron Technology Inc, MT47H64M16HR-3 L:E TR Datasheet - Page 54

• Manufacturer Part Number: MT47H64M16HR-3 L:E TR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 L:E TR

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 220mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

AC Overshoot/Undershoot Specification
Table 25: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Table 26: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Figure 20: Overshoot
Figure 21: Undershoot
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20 (page 54))
Maximum peak amplitude allowed for undershoot area
(see Figure 21 (page 54))
Maximum overshoot area above Vdd (see Figure 20 (page 54))
Maximum undershoot area below Vss (see Figure 21
(page 54))
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20 (page 54))
Maximum peak amplitude allowed for undershoot area
(see Figure 21 (page 54))
Maximum overshoot area above VddQ (see Figure 20
(page 54))
Maximum undershoot area below VssQ (see Figure 21
(page 54))
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 25 (page 54) and Table 26 (page 54).
Vdd/VddQ
Vss/VssQ
Vss/VssQ
Maximum amplitude
Maximum amplitude
54
Time (ns)
Time (ns)
AC Overshoot/Undershoot Specification
0.5 V/ns
0.5 V/ns
0.19 V/ns
0.19 V/ns
-187E
0.50V
0.50V
-187E
0.50V
0.50V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Undershoot area
Overshoot area
0.66 V/ns
0.66 V/ns
-25/-25E
0.23 V/ns
0.23 V/ns
1Gb: x4, x8, x16 DDR2 SDRAM
-25/-25E
0.50V
0.50V
0.50V
0.50V
Specification
Specification
0.80 V/ns
0.80 V/ns
0.23 V/ns
0.23 V/ns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
© 2004 Micron Technology, Inc. All rights reserved.
1.00 V/ns 1.33 V/ns
1.00 V/ns 1.33 V/ns
0.28 V/ns 0.38 V/ns
0.28 V/ns 0.38 V/ns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
0.50V
0.50V
0.50V
0.50V
-5E
-5E