MT47H64M16HR-3 L:E TR Micron Technology Inc, MT47H64M16HR-3 L:E TR Datasheet - Page 29

• Manufacturer Part Number: MT47H64M16HR-3 L:E TR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 L:E TR

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 220mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Table 10: DDR2 Idd Specifications and Conditions (Die Revisions E and G) (Continued)
Notes: 1–7 apply to the entire table
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Parameter/Condition
Active standby current: All
banks open;
t
CKE is HIGH, CS# is HIGH between
valid commands; Other control and
address bus inputs are switching;
Data bus inputs are switching
Operating burst write current:
All banks open, continuous burst
writes; BL = 4, CL = CL (Idd), AL = 0;
t
(Idd),
CS# is HIGH between valid com-
mands; Address bus inputs are
switching; Data bus inputs are
switching
Operating burst read current:
All banks open, continuous burst
reads, Iout = 0mA; BL = 4, CL = CL
(Idd), AL = 0;
t
CKE is HIGH, CS# is HIGH between
valid commands; Address bus in-
puts are switching; Data bus inputs
are switching
Burst refresh current:
(Idd); REFRESH command at every
t
CS# is HIGH between valid com-
mands; Other control and address
bus inputs are switching; Data bus
inputs are switching
Self refresh current: CK and CK#
at 0V; CKE ≤ 0.2V; Other control
and address bus inputs are float-
ing; Data bus inputs are floating
RAS MAX (Idd),
CK =
RAS MAX (Idd),
RFC (Idd) interval; CKE is HIGH,
t
t
CK (Idd),
RP =
t
RP (Idd); CKE is HIGH,
t
CK =
t
CK =
t
RAS =
t
t
RP =
RP =
t
CK (Idd),
t
CK (Idd),
t
t
t
RP (Idd);
RP (Idd);
RAS MAX
t
CK =
t
t
RAS =
RAS =
t
CK
Symbol
Idd4W
Idd3N
Idd4R
Idd6L
Idd5
Idd6
Configuration
x4, x8, x16
x4, x8
x4, x8
x16
x16
x16
x16
x4
x8
x4
x8
29
Electrical Specifications – Idd Parameters
-187E
190
210
405
190
210
420
265
300
70
95
7
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
-25E/
145
160
315
145
160
320
235
280
-25
60
85
7
5
1Gb: x4, x8, x16 DDR2 SDRAM
-3E/
120
135
200
120
135
220
215
270
55
75
-3
7
5
© 2004 Micron Technology, Inc. All rights reserved.
-37E
110
125
180
110
125
180
210
250
45
60
7
5
105
160
105
160
205
240
-5E
40
55
90
90
7
5
Units
mA
mA
mA
mA
mA