MT47H64M16HR-3 L:E TR Micron Technology Inc, MT47H64M16HR-3 L:E TR Datasheet - Page 23

• Manufacturer Part Number: MT47H64M16HR-3 L:E TR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 L:E TR

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 220mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Electrical Specifications – Absolute Ratings
Table 5: Absolute Maximum DC Ratings
Temperature and Thermal Impedance
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Parameter
Vdd supply voltage relative to Vss
VddQ supply voltage relative to VssQ
VddL supply voltage relative to VssL
Voltage on any ball relative to Vss
Input leakage current; any input 0V ≤ Vin ≤ Vdd; all other
balls not under test = 0V
Output leakage current; 0V ≤ Vout ≤ VddQ; DQ and ODT
disabled
Vref leakage current; Vref = Valid Vref level
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions outside those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 24), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 7 (page 25) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08,
listed in Table 7 (page 25). For designs that are expected to last several years and re-
quire the flexibility to use several DRAM die shrinks, consider using final target theta
values (rather than existing values) to account for increased thermal impedances from
the die size reduction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
1. Vdd, VddQ, and VddL must be within 300mV of each other at all times; this is not re-
2. Vref ≤ 0.6 × VddQ; however, Vref may be ≥ VddQ provided that Vref ≤ 300mV.
3. Voltage on any I/O may not exceed voltage on VddQ.
C
quired when power is ramping down.
specification is not exceeded. In applications where the device’s ambient temper-
“Thermal Applications”
Electrical Specifications – Absolute Ratings
23
Vin, Vout
Symbol
VddQ
VddL
Ivref
Vdd
Ioz
Ii
Micron Technology, Inc. reserves the right to change products or specifications without notice.
prior to using the thermal impedances
Min
–1.0
–0.5
–0.5
–0.5
1Gb: x4, x8, x16 DDR2 SDRAM
–5
–5
–2
Max
2.3
2.3
2.3
2.3
5
5
2
© 2004 Micron Technology, Inc. All rights reserved.
Units
µA
µA
µA
V
V
V
V
Notes
1, 2
1
1
3