TIM7785-4SL Toshiba, TIM7785-4SL Datasheet
TIM7785-4SL
Specifications of TIM7785-4SL
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TIM7785-4SL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM7785-4SL HIGH GAIN G1dB=6.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET ...
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... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7785-4SL SYMBOL UNIT ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS≅1.1A 38 Pin=30.0dBm Output Power(Pout) vs. Input Power(Pin) 39 freq.=8.1GHz 38 V =10V DS ≅1. TIM7785-4SL 7.7 8.1 8.3 7.9 Frequency(GHz) Pout ηadd 28 30 Pin(dBm ...
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... Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics -10 V =10V DS ≅1. freq.=8.1GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM7785-4SL (℃ ...
Page 5
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM7785-4UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
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... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7785-4UL SYMBOL ...
Page 7
... RF PERFORMANCE 10V DS ≅ Pin= 28.0dBm 7.4 7 8.1GHz V = 10V ≅ TIM7785-4UL Output Power vs. Frequency 7.8 8 8.2 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 8.4 8.6 8 ...
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... TIM7785-4UL Power Dissipation vs. Case Temperature (℃) IM3 vs. Output Power Characteristics - 10V DS ≅ 8.1GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level ...