TIM7785-60SL Toshiba, TIM7785-60SL Datasheet

TIM7785-60SL

Manufacturer Part Number

TIM7785-60SL

Description

Manufacturer

Toshiba

Datasheet

1.TIM7785-60SL.pdf (4 pages)

Specifications of TIM7785-60SL

Configuration

Single

Gate-source Voltage (max)

Drain-source Volt (max)

15V

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / RoHS Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TIM7785-60SL

Manufacturer:

TOSHIBA

Quantity:

5 000

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MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )

Output Power at 1Db Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

Drain Current

Channel Temperature Rise

Recommended Gate Resistance(Rg) : 28 Ω (Max.)

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

ELECTRICAL CHARACTERISTICS ( Ta= 25°C )

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

FEATURES

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

LOW INTERMODULATION DISTORTION

HIGH POWER

IM3=-45 dBc at Pout= 36.5dBm

Single Carrier Level

P1dB=48.0dBm at 7.7GHz to 8.5GHz

CHARACTERISTICS

SYMBOL

ΔTch

th(c-c)

GSoff

DS1

DS2

DSS

ΔG

GSO

1dB

add

(VDS X IDS + Pin – P1dB)

Channel to Case

(Single Carrier Level)

f = 7.7 to 8.5GHz

Two-Tone Test

CONDITIONS

= 12.0A

= 200mA

Po=36.5dBm

= -1.0mA

= 3V

= 0V

X Rth(c-c)

set≅9.5A

HIGH GAIN

G1dB=6.0dB at 7.7GHz to 8.5GHz

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

MICROWAVE POWER GaAs FET

= 10V

TIM7785-60SL

UNIT

° C/W

dBm

dBc

° C

MIN.

47.0

MIN.

-1.0

-42

5.0

⎯

-5

TYP. MAX.

Rev. Aug. 2008

48.0

13.2

TYP. MAX.

-45

6.0

-1.8

0.6

⎯

15.0

±0.8

11.8

100

-3.0

⎯

0.8

⎯

Related parts for TIM7785-60SL

TIM7785-60SL Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM7785-60SL HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET ...

Page 2

... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7785-60SL SYMBOL UNIT ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V 49 IDS≅13.2A Pin=42.0dBm Output Power(Pout) vs. Input Power(Pin) 51 freq.=8.5GHz 50 V =10V DS I set≅9. TIM7785-60SL 7.7 8.1 8.3 7.9 Frequency(GHz) Pout ηadd 40 42 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 200 100 IM3 vs. Power Characteristics -10 V =10V DS I set≅9.5A DS freq.=8.5GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM7785-60SL 80 120 Tc( ° 200 160 40 42 ...

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