TIM7785-30SL Toshiba, TIM7785-30SL Datasheet
TIM7785-30SL
Specifications of TIM7785-30SL
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TIM7785-30SL Summary of contents
Page 1
... SYMBOL CONDITIONS 10A GSoff 100mA DSS -350μA GSO GS R Channel to Case th(c-c) TIM7785-30SL UNIT MIN. TYP. MAX. dBm 44.5 45.0 dB 5.0 6.0 ⎯ A 7.0 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 7.0 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 6300 V -1 ...
Page 2
... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7785-30SL SYMBOL ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅7. Pin=39.0dBm Output Power(Pout) vs. Input Power(Pin) freq.=8.5GHz V =10V DS ≅7. TIM7785-30SL 7.7 7.9 8.1 8.3 Frequency(GHz) Pout ηadd 36 38 Pin(dBm ...
Page 4
... Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 IM3 vs. Output Power Characteristics -10 V =10V DS ≅7. freq.=8.5GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM7785-30SL 80 120 Tc( ° 200 160 38 40 ...
Page 5
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM7785-25UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
Page 6
... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7785-25UL SYMBOL ...
Page 7
... RF PERFORMANCE 47 VDS= 10V ≅ IDS 6.8A 46 Pin= 36.0dBm 7.4 7 8.1GHz VDS= 10V 4 5 ≅ IDS 6. TIM7785-25UL Output Power vs. Frequency 7.8 8 8.2 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 8.4 8.6 8 ...
Page 8
... TIM7785-25UL Power Dissipation vs. Case Temperature ℃ ) IM3 vs. Output Power Characteristics -20 VDS= 10V ≅ IDS 6.8A f= 8.1GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level ...