TIM7785-8SL Toshiba, TIM7785-8SL Datasheet
TIM7785-8SL
Specifications of TIM7785-8SL
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TIM7785-8SL Summary of contents
Page 1
... SYMBOL CONDITIONS 3. GSoff 30mA DSS -100μA GSO GS R Channel to Case th(c-c) TIM7785-8SL UNIT MIN. TYP. MAX. dBm 38.5 39.5 dB 5.0 6.0 ⎯ A 2.2 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 2.2 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 1800 V -1.0 -2.5 ⎯ ...
Page 2
... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7785-8SL SYMBOL UNIT ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅2. Pin=33.5dBm Output Power(Pout) vs. Input Power(Pin) 42 freq.=8.5GHz 41 V =10V DS ≅2. TIM7785-8SL 7.7 7.9 8.1 8.3 Frequency (GHz) Pout ηadd 31 33 Pin(dBm ...
Page 4
... Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics -10 V =10V DS ≅2. freq.=8.5GHz -20 Δf=5MHz -30 -40 -50 - Pout (dBm) @Single carrier level TIM7785-8SL 80 120 160 Tc (° 200 32 34 ...
Page 5
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM7785-8UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
Page 6
... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7785-8UL SYMBOL ...
Page 7
... RF PERFORMANCE 10V DS ≅ Pin= 31.0dBm 7.4 7 8.1GHz V = 10V DS 41 ≅ TIM7785-8UL Output Power vs. Frequency 7.8 8 8.2 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 8.4 8.6 8 ...
Page 8
... TIM7785-8UL Power Dissipation vs. Case Temperature (℃) IM3 vs. Output Power Characteristics - 10V DS ≅ 8.1GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 200 ...