FZ1800R12KL4C Infineon Technologies, FZ1800R12KL4C Datasheet - Page 8

• Manufacturer Part Number: FZ1800R12KL4C
• Description: IGBT Modules 1200V 1800A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1800R12KL4C

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 2850 A
• Gate-emitter Leakage Current: 600 nA
• Power Dissipation: 11.4 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 1,800.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / Technical Information
IGBT-Module
FZ 1800 R 12 KL4C
IGBT-Modules
preliminary data
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Datenblatt_FZ1800R12KL4C.xls