FZ1800R12KL4C Infineon Technologies, FZ1800R12KL4C Datasheet - Page 6

• Manufacturer Part Number: FZ1800R12KL4C
• Description: IGBT Modules 1200V 1800A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1800R12KL4C

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 2850 A
• Gate-emitter Leakage Current: 600 nA
• Power Dissipation: 11.4 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 1,800.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1200
1000
800
700
600
500
400
300
200
100
800
600
400
200
0
0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
300
600
Eoff
Eon
Erec
Eoff
Eon
Erec
2
900
FZ 1800 R 12 KL4C
1200
V
1500
E
GE
4
on
= ± 15V , R
6(8)
= f (I
R
V
E
I
1800
C
GE
G
on
[A]
= ± 15V , I
[ ]
C
) , E
gon
= f (R
= R
2100
goff
off
G
=0,51
C
= f (I
6
) , E
= 1800A , V
2400
off
C
, V
) , E
CE
= f (R
CE
= 600V, T
2700
rec
= 600V , T
G
= f (I
) , E
j
= 125°C
8
3000
j
C
= 125°C
vorläufige Daten
preliminary data
rec
)
= f (R
3300
Datenblatt_FZ1800R12KL4C.xls
G
)
3600
10