FZ1800R12KL4C Infineon Technologies, FZ1800R12KL4C Datasheet - Page 5

• Manufacturer Part Number: FZ1800R12KL4C
• Description: IGBT Modules 1200V 1800A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1800R12KL4C

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 2850 A
• Gate-emitter Leakage Current: 600 nA
• Power Dissipation: 11.4 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 1,800.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
3600
3000
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1800
1200
3600
3000
2400
1800
1200
600
600
0
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
6
0,5
Tj = 25°C
Tj = 125°C
FZ 1800 R 12 KL4C
7
Tj = 25°C
Tj = 125°C
1,0
8
5(8)
V
V
GE
F
1,5
[V]
[V]
9
I
C
V
= f (V
CE
2,0
= 20V
10
GE
)
I
2,5
F
vorläufige Daten
preliminary data
= f (V
11
Datenblatt_FZ1800R12KL4C.xls
F
)
3,0
12