FZ1600R12KL4C Infineon Technologies, FZ1600R12KL4C Datasheet - Page 7

• Manufacturer Part Number: FZ1600R12KL4C
• Description: IGBT Modules 1200V 1600A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1600R12KL4C

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 2450 A
• Gate-emitter Leakage Current: 600 nA
• Power Dissipation: 10 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 1,600.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
0,001
3600
3200
2800
2400
2000
1600
1200
800
400
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
0
Transienter Wärmewiderstand
Transient thermal impedance
r
r
0
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
IC,Modul
IC,Chip
: IGBT
: IGBT
: Diode
: Diode
200
0,01
FZ 1600 R 12 KL4C
400
0,00006
0,00014
0,1
0,21
0,32
1
600
7(8)
V
0,0187
0,0218
CE
3,98
4,70
800
2
t [sec]
[V]
1
Z
thJC
R
= f (t)
g
= 0,91 , T
1000
0,080
0,060
7,32
2,93
3
vj
10
Zth:IGBT
Zth:Diode
= 125°C
1200
13,05
0,99
0,50
0,50
4
Seriendatenblatt_FZ1600R12KL4C
1400
100