FZ1600R12KL4C Infineon Technologies, FZ1600R12KL4C Datasheet - Page 4

• Manufacturer Part Number: FZ1600R12KL4C
• Description: IGBT Modules 1200V 1600A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1600R12KL4C

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 2450 A
• Gate-emitter Leakage Current: 600 nA
• Power Dissipation: 10 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 1,600.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
3200
2800
2400
2000
1600
1200
3200,00
2800,00
2400,00
2000,00
1600,00
1200,00
800
400
800,00
400,00
0
0,00
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,0
0,5
0,5
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
VGE = 7V
Tj = 25°C
Tj = 125°C
1,0
1,0
FZ 1600 R 12 KL4C
1,5
1,5
V
2,0
V
4(8)
CE
CE
2,0
[V]
[V]
2,5
V
I
C
GE
2,5
= f (V
= 15V
3,0
I
C
T
vj
= f (V
= 125°C
CE
)
3,0
CE
3,5
)
3,5
4,0
Seriendatenblatt_FZ1600R12KL4C
4,0
4,5