FZ1600R12KL4C Infineon Technologies, FZ1600R12KL4C Datasheet

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FZ1600R12KL4C

Manufacturer Part Number
FZ1600R12KL4C
Description
IGBT Modules 1200V 1600A SINGLE
Manufacturer
Infineon Technologies
Datasheet
1.FZ1600R12KL4C.pdf (9 pages)

Specifications of FZ1600R12KL4C

Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Configuration
Dual Common Emitter Common Gate
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
2450 A
Gate-emitter Leakage Current
600 nA
Power Dissipation
10 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM
Ic (max)
1,600.0 A
Vce(sat) (typ)
2.1 V
Technology
IGBT2 Low Loss
Housing
IHM 130 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FZ1600R12KL4C
Manufacturer:
Sanrex
Quantity:
1 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
FZ1600R12KL4C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
FZ1600R12KL4C
Quantity:
55
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Mark Münzer
approved by: Christoph Lübke; 16.08.2000
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 02.09.1999
revision: 3
FZ 1600 R 12 KL4C
P
P
C
C
C
V
C
C
C
R
CE
CE
CE
= 1 ms, T
= 1 ms
GE
=25°C, Transistor
= 1600A, V
= 1600A, V
= 64mA, V
= 80 °C
= 25 °C
= 0V, t
= 1200V, V
= 1200V, V
= 0V, V
= -15V...+15V
p
vj
vj
= 10ms, T
C
GE
= 25°C,V
= 25°C,V
CE
= 80°C
GE
GE
= 20V, T
GE
GE
= V
= 15V, T
= 15V, T
= 0V, T
= 0V, T
GE
Vj
, T
CE
CE
vj
= 125°C
vj
= 25V, V
= 25V, V
= 25°C
vj
vj
= 25°C
vj
vj
1(8)
= 25°C
= 125°C
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
I
V
V
V
V
C,nom.
I
I
I
C
C
I
CRM
P
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
CES
I
GES
I
2
C
ies
res
tot
F
G
t
min.
4,5
-
-
-
-
-
-
-
-
+/- 20V
1200
1600
2450
3200
1600
3200
typ.
10,0
0,04
590
110
2,5
2,1
2,4
5,5
3,5
17
7
-
max.
600
2,6
2,9
6,5
1,5
-
-
-
-
kA
kW
mA
mA
kV
nF
nF
nA
V
A
A
A
V
A
A
V
V
V
C
2
FZ1600R12KL4C
s

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FZ1600R12KL4C Summary of contents

Page 1

... V 1200 V CES I 1600 A C,nom. I 2450 3200 A CRM P 10,0 kW tot V +/- 20V V GES I 1600 3200 A FRM 2 2 590 2,5 kV ISOL min. typ. max 2,1 2 sat - 2,4 2 4,5 5,5 6,5 V GE(th 110 - nF ies res I - 0,04 1,5 mA CES - 3 600 nA GES FZ1600R12KL4C ...

Page 2

... E - 210 - mWs 260 - mWs off I - 12000 - sCE CC‘+EE‘ min. typ. max 1,8 2 1,7 2 900 - 1450 - 150 - µ 340 - µ mWs rec - 115 - mWs Seriendatenblatt_FZ1600R12KL4C ...

Page 3

... FZ 1600 R 12 KL4C Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste grease terminals M4 terminals M8 3(8) min. typ. max 0,0125 K/W thJC - - 0,0210 K 0,006 - K/W thCK 150 ° -40 - 125 ° -40 - 125 °C stg 275 M1 4, 1 1500 g Seriendatenblatt_FZ1600R12KL4C ...

Page 4

... VGE = 17V 2800,00 VGE = 15V VGE = 13V VGE = 11V 2400,00 VGE = 9V VGE = 7V 2000,00 1600,00 1200,00 800,00 400,00 0,00 0,0 0,5 1,0 FZ 1600 R 12 KL4C 15V GE 1,5 2,0 2 1,5 2,0 2,5 3,0 V [ 3,0 3,5 4 125°C vj 3,5 4,0 4,5 Seriendatenblatt_FZ1600R12KL4C ...

Page 5

... Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 3200 2800 2400 2000 1600 1200 800 400 0 0,0 0,5 FZ 1600 R 12 KL4C 20V 25° 125° [ 25° 125°C 1,0 1,5 2,0 V [ 2,5 3,0 Seriendatenblatt_FZ1600R12KL4C ...

Page 6

... Schaltverluste (typisch) Switching losses (typical) 1400 Eoff 1200 Eon Erec 1000 800 600 400 200 1600 R 12 KL4C off =0, 600V, T gon goff CE 1200 1600 2000 I [ off I = 1600A , V = 600V , 6( rec C = 125°C j 2400 2800 3200 = rec G = 125° Seriendatenblatt_FZ1600R12KL4C ...

Page 7

... FZ 1600 R 12 KL4C Z thJC 0 [sec 0,21 3,98 0,00006 0,0187 0,32 4,70 0,00014 0,0218 R 400 600 800 V [ (t) Zth:IGBT Zth:Diode 10 100 3 4 7,32 0,99 0,080 0,50 2,93 13,05 0,060 0, 125° 1000 1200 1400 Seriendatenblatt_FZ1600R12KL4C ...

Page 8

... Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 12 KL4C 8(8) Seriendatenblatt_FZ1600R12KL4C ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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