BSM35GP120 Infineon Technologies, BSM35GP120 Datasheet - Page 8

• Manufacturer Part Number: BSM35GP120
• Description: IGBT Modules 1200V 35A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM35GP120

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 45 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
80
70
60
50
40
30
20
10
1
0
0,001
0
Sicherer Arbeitsbereich Wechselr. (RBSOA)
Reverse bias save operating area Inverter (RBSOA)
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
200
Zth-IGBT
Zth-FWD
0,01
400
BSM35GP120
IC,Modul
IC,Chip
V
600
CE
t [s]
8(11)
[V]
0,1
800
Z
thJC
T
vj
= 125°C, V
= f (t)
1000
I
C
= f (V
1
GE
CE
= ±15V, R
)
1200
G
=
22 Ohm
1400
10
DB-PIM-10 (2).xls