BSM35GP120 Infineon Technologies, BSM35GP120 Datasheet - Page 6

• Manufacturer Part Number: BSM35GP120
• Description: IGBT Modules 1200V 35A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM35GP120

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 45 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0
0
Übertragungscharakteristik Wechselr. (typisch)
Transfer characteristic Inverter (typical)
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch)
Forward characteristic of FWD Inverter (typical)
2
0,5
4
Tj = 25°C
Tj = 125°C
BSM35GP120
1
Tj = 25°C
Tj = 125°C
V
V
GE
F
6
6(11)
[V]
[V]
1,5
8
I
2
C
V
= f (V
CE
10
= 20 V
I
F
= f (V
GE
)
F
)
2,5
12
DB-PIM-10 (2).xls
14
3