BSM35GP120 Infineon Technologies, BSM35GP120 Datasheet - Page 4

• Manufacturer Part Number: BSM35GP120
• Description: IGBT Modules 1200V 35A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM35GP120

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 45 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant

Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Technische Information / Technical Information
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Trans. Bremse/ Trans. Brake
Diode Bremse/ Diode Brake
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
BSM35GP120
4(11)
Paste
grease
=1W/m*K
=1W/m*K
R
R
T
T
T
M
thCK
G
thJC
stg
op
vj
min.
-40
-40
-
-
-
-
-
-
-
-
-
Al
±10%
typ.
0,08
0,04
0,08
225
180
2
3
-
-
-
-
-
-
-
-
O
3
max.
0,55
150
125
125
0,8
0,7
2,3
1
-
-
-
DB-PIM-10 (2).xls
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Nm
°C
°C
°C
g