BAP55LX T/R NXP Semiconductors, BAP55LX T/R Datasheet - Page 4

• Manufacturer Part Number: BAP55LX T/R
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP55LX T/R

• Configuration: Single
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Power Dissipation: 135mW
• Operating Temperature Classification: Military
• Reverse Voltage: 50V
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: UHF/SHF
• Lead Free Status / RoHS Status: Compliant

NXP Semiconductors
BAP55LX
Product data sheet
Fig 1. Diode capacitance as a function of reverse
Fig 3. Isolation of the diode as a function of
(dB)
(fF)
ISL
C
400
300
200
100
−10
−20
−30
−40
d
0
0
voltage; typical values
frequency; typical values
0
f = 1 MHz; T
0
T
Diode zero biased and inserted in series with a 50 
stripline circuit
amb
= 25 C
5
j
= 25 C.
1000
10
2000
15
f (MHz)
All information provided in this document is subject to legal disclaimers.
001aag762
V
001aag764
R
(V)
Rev. 2 — 16 December 2010
3000
20
Fig 2. Forward resistance as a function of forward
Fig 4. Insertion loss of the diode as a function of
(dB)
L
(Ω)
r
10
(1) I
(2) I
(3) I
(4) I
ins
−0.2
−0.4
−0.6
−0.8
−1.0
D
10
10
−1
1
0
2
10
current; typical values
frequency; typical values
0
f = 100 MHz; T
T
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network
−1
F
F
F
F
amb
(3)
(4)
= 100 mA
= 10 mA
= 1 mA
= 0.5 mA
= 25 C
1000
j
1
= 25 C.
2000
10
BAP55LX
© NXP B.V. 2010. All rights reserved.
Silicon PIN diode
f (MHz)
I
f
(mA)
001aag763
001aag765
(1)
(2)
3000
10
2
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