BAP55LX T/R NXP Semiconductors, BAP55LX T/R Datasheet - Page 2

• Manufacturer Part Number: BAP55LX T/R
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP55LX T/R

• Configuration: Single
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Power Dissipation: 135mW
• Operating Temperature Classification: Military
• Reverse Voltage: 50V
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: UHF/SHF
• Lead Free Status / RoHS Status: Compliant

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 6.
T
BAP55LX
Product data sheet
Symbol
V
I
C
r
R
D
amb
F
d
= 25

C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
diode forward resistance
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BAP55LX
Symbol
V
I
Symbol
R
P
T
T
F
stg
j
R
tot
th(j-sp)
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
I
V
V
see
see
F
R
R
All information provided in this document is subject to legal disclaimers.
= 50 mA
V
V
V
I
I
I
I
F
F
F
F
= 20 V
= 50 V
R
R
R
Figure
Figure
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 20 V
Rev. 2 — 16 December 2010
1; f = 1 MHz;
2; f = 100 MHz;
Conditions
T
sp
= 90 C
Conditions
Marking code
LC
Min
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
65
65
Typ
0.95
-
-
0.28
0.23
0.18
3.3
2.2
0.8
0.5
BAP55LX
Max
50
100
135
+150
+150
Typ
78
© NXP B.V. 2010. All rights reserved.
Silicon PIN diode
Max
1.1
10
100
-
-
0.28
4.5
3.3
1.2
0.8
Unit
V
mA
mW
C
C
Unit
K/W
Unit
V
nA
nA
pF
pF
pF




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