RC28F640J3F75A NUMONYX, RC28F640J3F75A Datasheet - Page 62
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RC28F640J3F75A
Manufacturer Part Number
RC28F640J3F75A
Description
Manufacturer
NUMONYX
Datasheet
1.RC28F640J3F75A.pdf
(66 pages)
Specifications of RC28F640J3F75A
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RC28F640J3F75A
Manufacturer:
TOSHIBA
Quantity:
1 870
Company:
Part Number:
RC28F640J3F75A
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 41: Device Geometry Definition (Sheet 2 of 2)
Table 42: Device Geometry: Address Codes
13.7
Table 43: Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Datasheet
62
Notes:
1.
Offset
Offset
P = 31h
(P+0)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
2Dh
(1)
Compatible with J3 130nm device (32 bytes). J3 65 nm SBC device supports up to maximum 256 words (x16 mode)/
256 bytes (x8 mode) buffer write.
Address
Length
2A:
2B:
2C:
2D:
27:
28:
29:
2E:
2F:
30:
Length
4
Primary-Vendor Specific Extended Query Table
Certain flash features and commands are optional. The Primary Vendor-Specific
Extended Query table specifies this and other similar information.
3
1
1
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
Primary extended query table
Unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
(Optional Flash Features and Commands)
32 Mbit
--16
--02
--00
--05
--00
--01
--1F
--00
--00
--02
Numonyx
Description
Description
®
Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
64 Mbit
--17
--02
--00
--05
--00
--01
--00
--00
--02
--3F
Add.
31:
32:
33:
34:
35:
Code See Table Below
2D:
2E:
30:
2F:
128 Mbit
Code
--18
--02
--00
--05
--00
--01
--7F
--00
--00
--02
Hex
--50
--52
--49
--31
--31
March 2010
208032-02
Value
“R”
“1”
“1”
“P”
“I”