M28W640HCB70ZB6E NUMONYX, M28W640HCB70ZB6E Datasheet - Page 63
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M28W640HCB70ZB6E
Manufacturer Part Number
M28W640HCB70ZB6E
Description
Manufacturer
NUMONYX
Datasheet
1.M28W640HCB70ZB6E.pdf
(72 pages)
Specifications of M28W640HCB70ZB6E
Cell Type
NOR
Density
64Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
22b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
4M
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M28W640HCB70ZB6E
Manufacturer:
ST
Quantity:
20 000
Figure 19. Erase flowchart and pseudocode
1. If an error is found, the Status Register must be cleared before further program/erase operations.
Address & D0h
Read Status
Write Block
b4, b5 = 1
Write 20h
Register
b7 = 1
b3 = 0
b5 = 0
b1 = 0
Start
End
YES
YES
NO
YES
YES
NO
NO
YES
NO
NO
Sequence Error (1)
Erase to Protected
Erase Error (1)
Block Error (1)
V PP Invalid
Command
Error (1)
if ( (status_register.b5==1) )
/* erase error */
erase_command ( blockToErase ) {
if ( (status_register.b4==1) && (status_register.b5==1) )
/* command sequence error */
if (status_register.b1==1) /*program to protect block error */
if (status_register.b3==1) /*VPP invalid error */
}
do {
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
writeToFlash (any_address, 0x20) ;
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
} while (status_register.b7== 0) ;
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
AI03541b
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