M28W640HCB70ZB6E NUMONYX, M28W640HCB70ZB6E Datasheet - Page 63

• Manufacturer Part Number: M28W640HCB70ZB6E
• Manufacturer: NUMONYX

Specifications of M28W640HCB70ZB6E

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 22b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 4M
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

Figure 19. Erase flowchart and pseudocode
1. If an error is found, the Status Register must be cleared before further program/erase operations.
Address & D0h
Read Status
Write Block
b4, b5 = 1
Write 20h
Register
b7 = 1
b3 = 0
b5 = 0
b1 = 0
Start
End
YES
YES
NO
YES
YES
NO
NO
YES
NO
NO
Sequence Error (1)
Erase to Protected
Erase Error (1)
Block Error (1)
V PP Invalid
Command
Error (1)
if ( (status_register.b5==1) )
/* erase error */
erase_command ( blockToErase ) {
if ( (status_register.b4==1) && (status_register.b5==1) )
/* command sequence error */
if (status_register.b1==1) /*program to protect block error */
if (status_register.b3==1) /*VPP invalid error */
}
do {
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
writeToFlash (any_address, 0x20) ;
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
} while (status_register.b7== 0) ;
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
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