M28W640HCB70ZB6E NUMONYX, M28W640HCB70ZB6E Datasheet - Page 56

• Manufacturer Part Number: M28W640HCB70ZB6E
• Manufacturer: NUMONYX

Specifications of M28W640HCB70ZB6E

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 22b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 4M
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

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Table 28.
Offset
Mode
Word
2Ah
2Bh
2Ch
27h
28h
29h
2Dh
2Eh
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
2Fh
30h
31h
32h
33h
34h
Device geometry definition
0017h
0001h
0000h
0003h
0000h
0002h
007Eh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
007Eh
0000h
0000h
0001h
Data
Device size = 2
Flash device interface code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase block regions within the device.
It specifies the number of regions within the device containing
contiguous Erase blocks of the same size.
Region 1 information
Number of identical-size erase block = 007Eh+1
Region 1 information
Block size in Region 1 = 0100h * 256 byte
Region 2 information
Number of identical-size erase block = 0007h+1
Region 2 information
Block size in region 2 = 0020h * 256 byte
Region 1 information
Number of identical-size erase block = 0007h+1
Region 1 information
Block size in region 1 = 0020h * 256 byte
Region 2 information
Number of identical-size erase block = 007Eh=1
Region 2 information
Block size in region 2 = 0100h * 256 byte
n
in number of bytes
Description
n
64 Kbyte
64 Kbyte
8 Mbyte
8 Kbyte
8 Kbyte
Async.
Value
x 16
127
127
8
2
8
8