M25P32-VMW3TGB NUMONYX, M25P32-VMW3TGB Datasheet - Page 27

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M25P32-VMW3TGB

Manufacturer Part Number
M25P32-VMW3TGB
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M25P32-VMW3TGB

Cell Type
NOR
Density
32Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 125C
Package Type
SO W
Sync/async
Synchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
4M
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Supplier Unconfirmed

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Manufacturer:
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6.6
Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless
of the whether Write Protect (W/V
When the Status Register Write Disable (SRWD) bit of the Status Register is set to 1, two
cases need to be considered, depending on the state of Write Protect (W/V
Regardless of the order of the two events, the Hardware Protected Mode (HPM) can be
entered:
The only way to exit the Hardware Protected Mode (HPM) once entered is to pull Write
Protect (W/V
If Write Protect (W/V
never be activated, and only the Software Protected Mode (SPM), using the Block Protect
(BP2, BP1, BP0) bits of the Status Register, can be used.
Read Data Bytes (READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being
latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that
address, is shifted out on Serial Data Output (Q), each bit being shifted out, at a maximum
frequency f
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ) instruction. When the highest
address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip
Select (S) can be driven High at any time during data output. Any Read Data Bytes (READ)
instruction, while an Erase, Program or Write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
If Write Protect (W/V
provided that the Write Enable Latch (WEL) bit has previously been set by a Write
Enable (WREN) instruction.
If Write Protect (W/V
even if the Write Enable Latch (WEL) bit has previously been set by a Write Enable
(WREN) instruction. (Attempts to write to the Status Register are rejected, and are not
accepted for execution). As a consequence, all the data bytes in the memory area that
are software protected (SPM) by the Block Protect (BP2, BP1, BP0) bits of the Status
Register, are also hardware protected against data modification.
by setting the Status Register Write Disable (SRWD) bit after driving Write Protect
(W/V
or by driving Write Protect (W/V
(SRWD) bit.
PP
R
) Low
, during the falling edge of Serial Clock (C).
PP
) High.
PP
) is permanently tied High, the Hardware Protected Mode (HPM) can
PP
PP
) is driven High, it is possible to write to the Status Register
) is driven Low, it is not possible to write to the Status Register
PP
) is driven High or Low.
PP
Figure
) Low after setting the Status Register Write Disable
13.
PP
):
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