M25P32-VMW3TGB NUMONYX, M25P32-VMW3TGB Datasheet - Page 17

• Manufacturer Part Number: M25P32-VMW3TGB
• Manufacturer: NUMONYX

Specifications of M25P32-VMW3TGB

• Cell Type: NOR
• Density: 32Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 125C
• Package Type: SO W
• Sync/async: Synchronous
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 4M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Supplier Unconfirmed

5
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.
Figure 7.
W/V
HOLD
4,194,304 bytes (8 bits each)
64 sectors (512 Kbits, 65536 bytes each)
16384 pages (256 bytes each).
PP
Q
S
C
D
Block diagram
Address Register
Control Logic
and Counter
00000h
I/O Shift Register
256 Bytes (Page Size)
High Voltage
Generator
X Decoder
Data Buffer
256 Byte
3FFFFFh
000FFh
Register
Status
memory area
Size of the
read-only
AI08519b
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