M38510/20702BEA QP SEMICONDUCTOR, M38510/20702BEA Datasheet - Page 26

• Manufacturer Part Number: M38510/20702BEA
• Manufacturer: QP SEMICONDUCTOR

Specifications of M38510/20702BEA

• Lead Free Status / RoHS Status: Supplier Unconfirmed

4.8 Programming procedure for circuit B. The programming characteristics in table IVB and the following
procedures shall be used for programming the devices:
a. Connect the device in the electrical configuration for programming. The waveforms on figure 5B and
b. Raise V
c. Address the PROM with binary address of the selected word to be programmed.
d. Disable the chip by applying V
e. Apply the V
f. Apply the V
g. Other bits in the same word may be programmed sequentially applying V
h. Repeat 4.8b through 4.8g for all bits to be programmed.
i. Enable the chip by applying V
j. For classes S and B devices, if any bit does not verify as programmed it shall be considered a
the programming characteristics of table IVB shall apply to these procedures.
Address inputs are TTL compatible.
the voltage on the output pin, the program pin’s voltage pulse shall precede the output pin’s programming
pulse by t
The outputs shall be programmed one output at a time, since internal decoding circuitry is capable of
sinking only one unit of programming current at a time. Note that the PROM is supplied with fuses
generating a high-level logic output. Programming a fuse will cause the output to go to a low-level logic
in the verify mode.
programmed.
programming reject.
Verification may check for a low output by requiring the device to sink 12 mA at V
0.2 mA at V
CC
D1
to 5.5 volts.
PP
OUT
and leave after the output pin’s programming pulse by t
pulse to the CE pin. In order to insure that the output transistor is off before increasing
CC
pulse with duration of t
= 7.0 V at T
IL
IH
C
to the CE input and verify the program.
= 25°C.
to the CE input. CE input is TTL compatible.
MIL-M-38510/207E
P
to the output selected for programming (see table IVB).
26
D2
(see figure 5B).
OUT
pulses to each output to be
CC
= 4.0 V and