K4S641632KUC75 Samsung Semiconductor, K4S641632KUC75 Datasheet - Page 9

• Manufacturer Part Number: K4S641632KUC75
• Manufacturer: Samsung Semiconductor

Specifications of K4S641632KUC75

• Lead Free Status / RoHS Status: Compliant

Notes :
DC CHARACTERISTICS (x16)
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
K4S640832K
K4S641632K
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632K-T(U)C
4. K4S641632K-T(U)L
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
A
CC
CC
= 0 to 70°C for x16 only)
IH
9 of 14
= 10ns
= 10ns
/V
IH
IH
IL
CC
CC
IL
IL
=V
(min), t
(min), t
(max), t
(max), t
= ∞
= ∞
DDQ
/V
CC
CC
CC
CC
SSQ)
= 10ns
= 10ns
= ∞
= ∞
C
L
110
110
Rev. 1.1 February 2006
Synchronous DRAM
50
80
Version
100
100
400
70
15
30
25
60
1
1
6
3
3
1
55
85
85
75
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4