K4S641632KUC75 Samsung Semiconductor, K4S641632KUC75 Datasheet - Page 11

• Manufacturer Part Number: K4S641632KUC75
• Manufacturer: Samsung Semiconductor

Specifications of K4S641632KUC75

• Lead Free Status / RoHS Status: Compliant

AC CHARACTERISTICS
Notes :
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Notes :
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
K4S640832K
K4S641632K
Output rise time
Output fall time
Output rise time
Output fall time
Parameter
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
4. t
1. Rise time specification based on 0pF + 50 Ω to V
2. Fall time specification based on 0pF + 50 Ω to V
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
t
SS
SH
applies for address setup time
applies for address holde time, clock enable hold time, commend hold time and data hold time
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
trh
tfh
trh
tfh
(AC operating conditions unless otherwise noted)
Symbol
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
,
clock enable setup time
t
t
t
t
t
t
SAC
t
t
t
SHZ
SLZ
CC
OH
CH
CL
SS
SH
Condition
SS
.
Min
1.5
5
2
2
2
1
1
-
-
-
-
-
-
DD
SS
, use these values to design to.
, use these values to design to.
50
11 of 14
1000
Max
4.5
4.5
,
-
-
-
-
-
-
-
-
-
commend setup time and data setup time
1.37
1.30
Min
2.8
2.0
Min
2.5
2.5
2.5
1.5
10
6
3
1
1
-
-
-
-
Typ
60
3.9
2.9
1000
Max
5
6
5
6
-
-
-
-
-
-
-
Rev. 1.1 February 2006
Synchronous DRAM
Max
4.37
3.8
5.6
5.0
Min
7.5
2.5
2.5
1.5
0.8
10
3
3
1
-
-
-
-
75
Volts/ns
Volts/ns
Volts/ns
Volts/ns
1000
Max
Unit
5.4
5.4
6
6
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1,2
1,2
3
3
Note
3, 4
3, 4
1,2
1
2
3
3
2