K4S641632KUC75 Samsung Semiconductor, K4S641632KUC75 Datasheet - Page 7

• Manufacturer Part Number: K4S641632KUC75
• Manufacturer: Samsung Semiconductor

Specifications of K4S641632KUC75

• Lead Free Status / RoHS Status: Compliant

Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS
CAPACITANCE
Recommended operating conditions (Voltage referenced to V
K4S640832K
K4S641632K
Notes :
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x8 : DQ0 ~ DQ7), (x16 : DQ0 ~DQ15)
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
Parameter
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to V
(V
DD
Pin
= 3.3V, T
IN
≤ V
SS
DDQ
SS
A
V
.
= 23°C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
DD
IN
T
Min
-0.3
3.0
2.0
2.4
-10
, V
I
P
, V
STG
OS
-
REF
D
OUT
DDQ
SS
Symbol
=1.4V ± 200 mV)
C
C
C
7 of 14
= 0V, T
C
ADD
OUT
CLK
IN
A
= 0 to 70°C)
Typ
3.3
3.0
0
-
-
-
Min
2.5
2.5
2.5
4.0
V
-55 ~ +150
DD
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
Value
-
+0.3
50
1
Max
4.0
5.0
5.0
6.5
Rev. 1.1 February 2006
Synchronous DRAM
Unit
uA
V
V
V
V
V
Unit
pF
pF
pF
pF
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Note