MT48LC16M16A2P-75:D Micron Technology Inc, MT48LC16M16A2P-75:D Datasheet - Page 31

• Manufacturer Part Number: MT48LC16M16A2P-75:D
• Description: IC, SDRAM, 256MBIT, 133MHZ, TSOP-54
• Manufacturer: Micron Technology Inc
• Type: SDRAMr
• Series: -r

Specifications of MT48LC16M16A2P-75:D

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Memory Type: DRAM - Sychronous
• Memory Configuration: 16 X 16
• Access Time: 5.4ns
• Page Size: 256Mbit
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Format - Memory: RAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Functional Description
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
In general, 256Mb SDRAM devices (16 Meg x 4 x 4 banks, 8 Meg x 8 x 4 banks, and 4 Meg
x 16 x 4 banks) are quad-bank DRAM that operate at 3.3V and include a synchronous
interface. All signals are registered on the positive edge of the clock signal, CLK. Each of
the x4’s 67,108,864-bit banks is organized as 8192 rows by 2048 columns by 4 bits. Each
of the x8’s 67,108,864-bit banks is organized as 8192 rows by 1024 columns by 8 bits.
Each of the x16’s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16
bits.
Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected
location and continue for a programmed number of locations in a programmed se-
quence. Accesses begin with the registration of an ACTIVE command, followed by a
READ or WRITE command. The address bits registered coincident with the ACTIVE com-
mand are used to select the bank and row to be accessed (BA0 and BA1 select the bank,
A[12:0] select the row). The address bits (x4: A[9:0], A11; x8: A[9:0]; x16: A[8:0]) registered
coincident with the READ or WRITE command are used to select the starting column
location for the burst access.
Prior to normal operation, the SDRAM must be initialized. The following sections pro-
vide detailed information covering device initialization, register definition, command
descriptions, and device operation.
31
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 SDRAM
Functional Description
© 1999 Micron Technology, Inc. All rights reserved.