MT28C64432W18AFW-F705P70 TWT Micron Technology Inc, MT28C64432W18AFW-F705P70 TWT Datasheet - Page 5

• Manufacturer Part Number: MT28C64432W18AFW-F705P70 TWT
• Manufacturer: Micron Technology Inc

Specifications of MT28C64432W18AFW-F705P70 TWT

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Device General Description
W30A, and MT28C64464W18/W30A combination
Flash and CellularRAM are high-performance, high-
density, memory solutions that can significantly
improve system performance. This memory solution is
comprised of one 64Mb Flash device and one 16Mb,
32Mb, or 64Mb CellularRAM device.
tained in this document supersede the specifications
listed in the referenced individual Flash and Cellular-
RAM data sheets.
mode specifications in the referenced Flash discrete
data sheet should be ignored, as they do not pertain to
asyncronous/page mode operation.
Flash General Description
configuration that supports READ-while-PROGRAM/
ERASE operations with no latency. A 4Mb partition size
enables optimal design flexibility.
as read only, by configuring soft protection registers
with dedicated command sequences. For security pur-
poses, one user-programmable 64-bit chip protection
register is provided for the Flash device.
ERASE functions are fully automated by an on-chip
write state machine (WSM). An on-chip device status
register can be used to monitor the WSM status and
determine the progress of the PROGRAM/ERASE tasks.
that defines how the Flash interacts with the memory bus.
For device specifications and additional documentation
concerning
MT28F644W18/W30 data sheet at
flash.
Flash Configurations
tecture (16 banks of 4Mb each) to allow concurrent
operations. Any address within a block address range
selects that block for the required READ, PROGRAM, or
ERASE operation.
09005aef80c9c807
MT28C64432W18A.fm - Rev. F Pub 2/04 EN
The MT28C64416W18/W30A, MT28C64432W18/
It is important to note that the specifications con-
For all asyncronous/page Flash devices, the burst
The Flash
The Flash device enables soft protection for blocks,
The embedded WORD PROGRAM and BLOCK
The Flash device has a read configuration register (RCR)
The Flash memory implements a multibank archi-
Flash
architecture features a multipartition
features,
please
64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH
www.micron.com/
refer
16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM
to
the
5
x 65,536 bits), designated as parameter blocks, and the
remaining part is organized in main blocks of 32K
words each (524,288 bits). The parameter blocks are
addressed either by the low order addresses (bottom
boot) or by the higher order addresses (top boot).
CellularRAM General Description
CMOS, dynamic random-access memories developed
for low-power portable applications The CellularRAM
device is available in either 16Mb, 32Mb, or 64Mb
densities.
RAM products have incorporated a transparent self-
refresh mechanism. The hidden refresh requires no
additional support from the system memory controller
and has no significant impact on device read/write
performance.
how refresh is performed on the CellularRAM array.
These registers are automatically loaded with default
settings during power-up and can be updated any time
during normal operation. Special attention has been
focused on standby current consumption during self-
refresh.
sible mechanisms used to minimize standby current.
Partial array refresh (PAR) limits refresh to the portion
of the memory array being used. Temperature com-
pensated refresh (TCR) is used to adjust the refresh
rate according to the ambient temperature. The
refresh rate can be decreased at lower temperatures to
minimize current consumption during standby. Deep
power down (DPD) halts the refresh operation alto-
gether and is used when no vital information is stored
in the device. These three refresh mechanisms are
adjusted through the configuration register (CR) .
documentation concerning CellularRAM, please refer to
the
MT45W1ML16PAFA,
MT45W4MW16PFA,
CellularRAM
cellularram.
The Flash memory features eight 4K-word sectors (8
The CellularRAM architecture features high-speed
To operate seamlessly on a burst Flash bus, Cellular-
The configuration register (CR) is used to control
CellularRAM products include three system-acces-
For
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT45W1MW16PAFA,
device
data
specifications
sheets
and
©2003 Micron Technology. Inc. All rights reserved.
at
MT45W2MW16PFA,
MT45W2ML16PFA,
MT45W4ML16PFA
www.micron.com/
and
additional