MT28C64432W18AFW-F705P70 TWT Micron Technology Inc, MT28C64432W18AFW-F705P70 TWT Datasheet

MT28C64432W18AFW-F705P70 TWT

Manufacturer Part Number

MT28C64432W18AFW-F705P70 TWT

Description

Manufacturer

Micron Technology Inc

Datasheet

1.MT28C64432W18AFW-F705P70_TWT.pdf (13 pages)

Specifications of MT28C64432W18AFW-F705P70 TWT

Operating Supply Voltage (max)

1.95V

Operating Temperature (max)

85C

Mounting

Surface Mount

Lead Free Status / RoHS Status

Not Compliant

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CUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE by MICRON WITHOUT NOTICE. PRODUCTS ARE

FLASH AND CellularRAM

COMBO MEMORY

Features

Stacked die Combo package

Basic configuration

F_V

Fast programming Algorithm (FPA)

Enhanced suspend options

Flash device contains two 64-bit chip protection registers

100,000 ERASE cycles per block

Cross-compatible command set support

Manufacturer’s Identification Code (ManID)

††

Options

Flash Timing

Flash Burst Frequency

09005aef80c9c807

MT28C64432W18A.fm - Rev. F Pub 2/04 EN

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

MT28C64416W18/W30A is advance status.

• Includes one 64Mb Flash device

• Choice of either 16Mb, 32Mb, or 64Mb Cellular-

Flash

• Flexible multibank architecture

• 4 Meg x 16 Async/Page/Burst interface

• Support for true concurrent operations with no

CellularRAM

• Low-power, high-density design

• 1 Meg x 16, 2 Meg x 16, or 4 Meg x 16 configurations

• Async/Page

• 1.70V (MIN)/1.95V (MAX) F_V

• 1.70V (MIN)/2.24V (MAX) V

• 2.20V (MIN)/3.30V(MAX) V

• 1.80V (TYP) F_V

• 12V ±5% (HV) F_V

• ERASE-SUSPEND-to-READ within same bank

• PROGRAM-SUSPEND-to-READ within same bank

• ERASE-SUSPEND-to-PROGRAM within same bank

for security purposes

• Extended command set

• Common Flash interface (CFI) compliant

• Micron

• Intel

• 60ns

• 70ns (W18/W30)

• 66 MHz

• 54 MHz (W18/W30)

RAM device

latency

compatibility)

, V

Q, F_V

(W18)

, C_V

ONLY WARRANTED BY MICRON TO MEET MICRON'S PRODUCTION DATA SHEET SPECIFICATIONS.

(in-system PROGRAM/ERASE)

tolerant (factory programming

voltages

Q (W30)

Q (W18)

64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH

, C_V

16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM

™

Flash Boot Block Configuration

CellularRAM Timing

I/O Voltage Range

Manufacturer’s Identification Code (ManID)

Operating Temperature Range

Package

NOTE:

MT28C64416W18/W30A (ADVANCE

MT28C64432W18/W30A

MT28C64464W18/W30A

Low Voltage, Wireless Temperature

NOTE:

Top

Bottom

• 70ns

• 85ns

• VccQ 1.70V–2.24V (W18)

• VccQ 2.20V–3.30V (W30)

• Micron (0x2Ch)

• Intel (0x89h)

• Wireless Temperature (-25°C to +85°C)

• 77-ball (Standard) FBGA 8 x 10 grid

• 77-ball (Lead-free) FBGA 8 x 10 grid

Balls B6, D5, and F7 are only used for Flash burst operation.

1. Contact factory for availability.

2. Contact factory for details.

C_OE#

C_VSS

F_CE#

Figure 1: 77-Ball FBGA

C_LB#

F_OE#

VSSQ

DQ8

DQ0

A18

A17

C_UB#

VCCQ

A19

DQ2

DQ1

DQ9

F_WP#

F_RST#

C_VSS

F_VPP

F_VCC

DQ10

DQ11

DQ3

‡‡

(Ball?Down)

?Top View

PRODUCTS AND SPECIFICATIONS DIS-

F_ADV#

C_WE#

F_WE#

C_VCC

F_VCC

C_VSS

DQ12

DQ5

DQ4

F_VCC

F_CLK

C_CE#

F_VCC

DQ13

DQ14

VSSQ

DQ6

A20

F_WAIT#

DQ15

VCCQ

F_VSS

A21

DQ7

RFU

A10

A14

VCCQ

C_ZZ#

C_VSS

A11

A12

A13

A15

A16

RFU

‡‡

)

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MT28C64432W18AFW-F705P70 TWT Summary of contents

Page 1

... FLASH AND CellularRAM COMBO MEMORY Features Stacked die Combo package • Includes one 64Mb Flash device • Choice of either 16Mb, 32Mb, or 64Mb Cellular- RAM device Basic configuration Flash • Flexible multibank architecture • 4 Meg x 16 Async/Page/Burst interface • Support for true concurrent operations with no ...

Page 2

Table of Contents Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

List of Figures Figure 1: 77-Ball FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of Tables Table 1: Ball Descriptions ...

Page 5

Device General Description The MT28C64416W18/W30A, MT28C64432W18/ W30A, and MT28C64464W18/W30A combination Flash and CellularRAM are high-performance, high- density, memory solutions that can significantly improve system performance. This memory solution is comprised of one 64Mb Flash device and one 16Mb, 32Mb, or ...

Page 6

F_OE# F_CE# F_WE# 1 F_ADV# A0–A21 C_CE# C_ZZ# C_OE# C_WE# NOTE: 1. For Flash burst operation only. 09005aef80c9c807 MT28C64432W18A.fm - Rev. F Pub 2/04 EN 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM ...

Page 7

Part Numbering Information Micron’s combination memory devices are available with several different combinations of features (see Figure 3). MT28C 644 64 W18 A FW -F70 Micron Technology Flash Family 28C = Dual-Supply Flash/CellularRAM Combo Density/Organization/Banks 64 = 64Mb (4,096K x ...

Page 8

Table 1: Ball Descriptions 77-BALL FBGA NUMBERS SYMBOL F1, E1, D1, C1, A1, A0–A21 B1, E2, D2, E6, C7, D7, A8, B8, C8, E7, D8, E8, C2, A2, A3, D6 F_CE# H2 F_OE# E5 F_WE# D4 F_WP# D5 ...

Page 9

MultiChip Packaging Considerations Multichip packaging presents unique chal- lenges when controlling complex memory devices. The MT28C64416W18/W30A, MT28C64432W18/ W30A, and MT28C644644W18/W30A devices com- bine one Micron Flash device with a single Cellular- RAM device. Unique IDs, State Machines, and Registers The ...

Page 10

Electrical Specifications Table 3: Absolute Maximum Ratings Note 1 PARAMETERS/CONDITIONS Operating Temperature Range Storage Temperature Range Soldering Cycle NOTE: 1. Stresses greater than those listed in Table 3 may cause permanent damage to the device. This is a stress rating ...

Page 11

Table 6: DC Characteristics It is important to note that the specifications contained in this document supersede the specifications listed in the referenced individual Flash and CellularRAM data sheets. All currents are in RMS unless otherwise noted. PARAMETER V Standby ...

Page 12

SEATING PLANE C 0.10 C 77X ∅0.35 DIMENSIONS APPLY TO SOLDER BALLS POST REFLOW. THE PRE-REFLOW BALL DIAMETER IS Ø 0.35mm ON A 0.30mm SMD BALL PAD. BALL A8 7.20 3.60 2.80 8.00 ±0.10 NOTE: 1. All dimensions in millimeters. ...

Page 13

Revision History Rev F, Production.............................................................................................................................................................2/04 Rev E, Preliminary ...........................................................................................................................................................1/04 • Updated notes on F_CLK and F_ADV balls • Updated standby current specifications in the DC Characteristics Table Rev D, Preliminary.........................................................................................................................................................11/03 • Modified the Part Numbering Chart to allow for Async/Page ...

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